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Электронные компоненты со склада в Новосибирске (компания Трайсель)


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Parameters of the group components:

Vdss[V]

(Drain-Source voltage) Breakdown voltage between drain and source, gate-source short-circuited (VGS = 0) Breakdown voltage between drain and source, gate-source short-circuited (VGS = 0)

Id(A)

(DC drain current) Continuous direct drain current (MOSFETs)

Rds@10

(Drain-source on-resistance) Quotient of changing drain-source voltageVDS and drain current ID in a thoroughly gatecontrolled MOSFET at a specified gate-source voltage VGS and a specified drain current ID (at .rated current.),VDS(on) = RDS(on) * ID.

Rds@4V5

()

Pd(W)

(Power dissipation) Maximum power dissipation Ptot = (Tjmax-Tcase)/Rthjc, Parameter: case temperature Tcase = 25.C

td(on) ns

(Turn-on delay time) the time interval between the moment when the gate-emitter voltage VGE has reached 10 % of its end value (VGG), and when the drain-source voltage has dropped to 90 % of its initial value (VDD).

tr (ns)

(Rise time) The time needed for the output pulse to fall from 90% to 10% of its maximum amplitude.

td(off) ns

(Turn-off delay time) the time interval between the moment when the gate-emitter voltage VGE has declined to 90 % of its initial value (VGG), and the drain-source voltage has risen to 10 % of the supply voltage VDD.

tf (ns)

(Fall time) The time needed for the output pulse to fall from 90% to 10% of its maximum amplitude.




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